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Journal Articles

Depth profile of oxide-trapped charges in 6H-SiC metal-oxide-semiconductor structures irradiated with gamma-rays

Yoshikawa, Masahito; *; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

14th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Univ., 0, p.159 - 165, 1996/00

no abstracts in English

Journal Articles

Hot-implantation of nitrogen and aluminumions into SiC semiconductor

Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

14th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Univ., 0, p.147 - 150, 1995/00

no abstracts in English

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